Raman-scattering study of the InGaN alloy over the whole composition range
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چکیده
We present Raman-scattering measurements on InxGa1−xN over the entire composition range of the alloy. The frequencies of the A1 LO and E2 modes are reported and show a good agreement with the one-mode behavior dispersion predicted by the modified random-element isodisplacement model. The A1 LO mode displays a high intensity relative to the E2 mode due to resonant enhancement. For above band-gap excitation, the A1 LO peak displays frequency shifts as a function of the excitation energy due to selective excitation of regions with different In contents, and strong multiphonon scattering up to 3LO is observed in outgoing resonance conditions. © 2005 American Institute of Physics. DOI: 10.1063/1.1940139
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تاریخ انتشار 2005